it will create an empty BBT table without considering vendor's BBT
information. Vendor's information may be unavailable if the NAND
controller has a different DATA & OOB layout or this information may be
allready purged.
Signed-off-by: Sebastian Andrzej Siewior <bigeasy@linutronix.de>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
The first (sixt) byte in the OOB area contains vendor's bad block
information. During identification of the NAND chip this information is
collected by scanning the complete chip.
The option NAND_USE_FLASH_BBT is used to store this information in a sector so
we don't have to scan the complete flash. Unfortunately the code stores
a marker in order to recognize the BBT in the OOB area. This will fail
if the OOB area is completely used for ECC.
This patch introduces the option NAND_USE_FLASH_BBT_NO_OOB which has to be
used with NAND_USE_FLASH_BBT. It will then store BBT on flash without
touching the OOB area. The BBT format on flash remains same except the
first page starts with the recognition pattern followed by the version byte.
This change was tested in nandsim and it looks good so far :)
Signed-off-by: Sebastian Andrzej Siewior <bigeasy@linutronix.de>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
No code change.
Signed-off-by: Sebastian Andrzej Siewior <bigeasy@linutronix.de>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Signed-off-by: Sebastian Andrzej Siewior <bigeasy@linutronix.de>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This is a revision to PATCH 2/2 that I sent. Link:
http://lists.infradead.org/pipermail/linux-mtd/2010-July/030911.html
Added new flag for scanning of both bytes 1 and 6 of the OOB for
a BB marker (instead of simply one or the other).
The "check_pattern" and "check_short_pattern" functions were updated
to include support for scanning the two different locations in the OOB.
In order to handle increases in variety of necessary scanning patterns,
I implemented dynamic memory allocation of nand_bbt_descr structs
in new function 'nand_create_default_bbt_descr()'. This replaces
some increasingly-unwieldy, statically-declared descriptors. It can
replace several more (e.g. "flashbased" structs). However, I do not
test the flashbased options personally.
How this was tested:
I referenced 30+ data sheets (covering 100+ parts), and I tested a
selection of 10 different chips to varying degrees. Particularly, I
tested the creation of bad-block descriptors and basic BB scanning on
three parts:
ST NAND04GW3B2D, 2K page
ST NAND128W3A, 512B page
Samsung K9F1G08U0A, 2K page
To test these, I wrote some fake bad block markers to the flash (in OOB
bytes 1, 6, and elsewhere) to see if the scanning routine would detect
them properly. However, this method was somewhat limited because the
driver I am using has some bugs in its OOB write functionality.
Signed-off-by: Brian Norris <norris@broadcom.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Some level of support for various scanning locations was already built in,
but this required clean-up. First, BB marker location cannot be determined
_only_ by the page size. Instead, I implemented some heuristic detection
based on data sheets from various manufacturers (all found in
nand_base.c:nand_get_flash_type()).
Second, once these options were identified, they were not handled properly
by nand_bbt.c:nand_default_bbt(). I updated the static nand_bbt_desc structs
to reflect the need for more combinations of detection. The memory allocation
here probably needs to be done dynamically in the very near future (see next
patches).
Signed-off-by: Brian Norris <norris@broadcom.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
NAND_BB_LAST_PAGE used to be in nand.h, but it pertained to bad block
management and so belongs next to NAND_BBT_SCAN2NDPAGE in bbm.h. Also,
its previous flag value (0x00000400) conflicted with NAND_BBT_SCANALLPAGES
so I changed its value to 0x00008000. All uses of the name were modified to
provide consistency with other "NAND_BBT_*" flags.
Signed-off-by: Brian Norris <norris@broadcom.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This is a slightly modified version of a patch submitted last year by
Reuben Dowle <reuben.dowle@navico.com>. His original comments follow:
This patch adds support for some MLC NAND flashes that place the BB
marker in the LAST page of the bad block rather than the FIRST page used
for SLC NAND and other types of MLC nand.
Lifted from Samsung datasheet for K9LG8G08U0A (1Gbyte MLC NAND):
"
Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial
invalid block(s) information is written prior to shipping. The initial
invalid block(s) status is defined by the 1st byte in the spare area.
Samsung makes sure that the last page of every initial invalid block has
non-FFh data at the column address of 2,048.
...
"
As far as I can tell, this is the same for all Samsung MLC nand, and in
fact the samsung bsp for the processor used in our project (s3c6410)
actually contained a hack similar to this patch but less portable to
enable use of their NAND parts. I discovered this problem when trying to
use a Micron NAND which does not used this layout - I wish samsung would
put their stuff in main-line to avoid this type of problem.
Currently this patch causes all MLC nand with manufacturer codes from
Samsung and ST(Numonyx) to use this alternative location, since these
are the manufactures that I know of that use this layout.
Signed-off-by: Kevin Cernekee <cernekee@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This changes the behavier of MTD_OOB_RAW. It used to read both OOB and
data to the data buffer, however you would still need to specify the
dummy oob buffer.
This is only used in one place, but makes it hard to read data+oob
without ECC test, thus I removed that behavier, and fixed the user.
Now MTD_OOB_RAW behaves just like MTD_OOB_PLACE, but doesn't do ECC
validation
Signed-off-by: Maxim Levitsky <maximlevitsky@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
MTD internal API presently uses 32-bit values to represent
device size. This patch updates them to 64-bits but leaves
the external API unchanged. Extending the external API
is a separate issue for several reasons. First, no one
needs it at the moment. Secondly, whether the implementation
is done with IOCTLs, sysfs or both is still debated. Thirdly
external API changes require the internal API to be accepted
first.
Note that although the MTD API will be able to support 64-bit
device sizes, existing drivers do not and are not required
to do so, although NAND base has been updated.
In general, changing from 32-bit to 64-bit values cause little
or no changes to the majority of the code with the following
exceptions:
- printk message formats
- division and modulus of 64-bit values
- NAND base support
- 32-bit local variables used by mtdpart and mtdconcat
- naughtily assuming one structure maps to another
in MEMERASE ioctl
Signed-off-by: Adrian Hunter <ext-adrian.hunter@nokia.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Once upon a time, the MTD repository was using CVS.
This patch therefore removes all usages of the no longer updated CVS
keywords from the MTD code.
This also includes code that printed them to the user.
Signed-off-by: Adrian Bunk <bunk@kernel.org>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
As was discussed between Ricard Wanderlöf, David Woodhouse, Artem
Bityutskiy and me, the current API for reading/writing OOB is confusing.
The thing that introduces confusion is the need to specify ops.len
together with ops.ooblen for reads/writes that concern only OOB not data
area. So, ops.len is overloaded: when ops.datbuf != NULL it serves to
specify the length of the data read, and when ops.datbuf == NULL, it
serves to specify the full OOB read length.
The patch inlined below is the slightly updated version of the previous
patch serving the same purpose, but with the new Artem's comments taken
into account.
Artem, BTW, thanks a lot for your valuable input!
Signed-off-by: Vitaly Wool <vwool@ru.mvista.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
The raw read/write access to NAND (without ECC) has been changed in the
NAND rework. Expose the new way - setting the file mode via ioctl - to
userspace. Also allow to read out the ecc statistics information so userspace
tools can see that bitflips happened and whether errors where correctable
or not. Also expose the number of bad blocks for the partition, so nandwrite
can check if the data fits into the parition before writing to it.
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
Hopefully the last iteration on this!
The handling of out of band data on NAND was accompanied by tons of fruitless
discussions and halfarsed patches to make it work for a particular
problem. Sufficiently annoyed by I all those "I know it better" mails and the
resonable amount of discarded "it solves my problem" patches, I finally decided
to go for the big rework. After removing the _ecc variants of mtd read/write
functions the solution to satisfy the various requirements was to refactor the
read/write _oob functions in mtd.
The major change is that read/write_oob now takes a pointer to an operation
descriptor structure "struct mtd_oob_ops".instead of having a function with at
least seven arguments.
read/write_oob which should probably renamed to a more descriptive name, can do
the following tasks:
- read/write out of band data
- read/write data content and out of band data
- read/write raw data content and out of band data (ecc disabled)
struct mtd_oob_ops has a mode field, which determines the oob handling mode.
Aside of the MTD_OOB_RAW mode, which is intended to be especially for
diagnostic purposes and some internal functions e.g. bad block table creation,
the other two modes are for mtd clients:
MTD_OOB_PLACE puts/gets the given oob data exactly to/from the place which is
described by the ooboffs and ooblen fields of the mtd_oob_ops strcuture. It's
up to the caller to make sure that the byte positions are not used by the ECC
placement algorithms.
MTD_OOB_AUTO puts/gets the given oob data automaticaly to/from the places in
the out of band area which are described by the oobfree tuples in the ecclayout
data structre which is associated to the devicee.
The decision whether data plus oob or oob only handling is done depends on the
setting of the datbuf member of the data structure. When datbuf == NULL then
the internal read/write_oob functions are selected, otherwise the read/write
data routines are invoked.
Tested on a few platforms with all variants. Please be aware of possible
regressions for your particular device / application scenario
Disclaimer: Any whining will be ignored from those who just contributed "hot
air blurb" and never sat down to tackle the underlying problem of the mess in
the NAND driver grown over time and the big chunk of work to fix up the
existing users. The problem was not the holiness of the existing MTD
interfaces. The problems was the lack of time to go for the big overhaul. It's
easy to add more mess to the existing one, but it takes alot of effort to go
for a real solution.
Improvements and bugfixes are welcome!
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
Modularize the write function and reorganaize the internal buffer
management. Remove obsolete chip options and fixup all affected
users.
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
MTD clients are agnostic of FLASH which needs ECC suppport.
Remove the functions and fixup the callers.
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
At least two flashes exists that have the concept of a minimum write unit,
similar to NAND pages, but no other NAND characteristics. Therefore, rename
the minimum write unit to "writesize" for all flashes, including NAND.
Signed-off-by: Joern Engel <joern@wh.fh-wedel.de>
We were scanning for 0xFF through the entire chip -- which takes a while
when it's a 512MiB device as I have on my current toy. The specs only say
we need to check certain bytes -- so do only that.
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
The previous change to read a single byte from oob breaks the
bad block scan on 16 bit devices, when the byte is on an odd
address. Read the complete oob for now.
Remove the unused arguments from check_short_pattern()
Move the wait for ready function so it is only executed when
consecutive reads happen.
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
Scan 1st and 2nd pages of SP devices for BB marker by default.
Fix more then one page scanning in create_bbt.c.
Signed-off-by: Artem B. Bityuckiy <dedekind@infradead.org>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
When scanning NAND for bad blocks, don't read the whole page, read
only needed OOB bytes instead. Also check the return code of the
nand_read_raw() function. Correctly free the this->bbt array in
case of failure. Tested with Large page NAND.
Fix debugging message.
Signed-off-by: Artem B. Bityuckiy <dedekind@infradead.org>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
Initial git repository build. I'm not bothering with the full history,
even though we have it. We can create a separate "historical" git
archive of that later if we want to, and in the meantime it's about
3.2GB when imported into git - space that would just make the early
git days unnecessarily complicated, when we don't have a lot of good
infrastructure for it.
Let it rip!
