nand: Correct random data reads.

Random reading depends on having the last row/page latched and not beeing
clobbered between read and any following random reads.

Also, s->iolen must be updated when loading the io/data register with
randomly accessed flash data.

Signed-off-by: Edgar E. Iglesias <edgar.iglesias@gmail.com>
This commit is contained in:
Edgar E. Iglesias 2010-01-12 14:48:19 +01:00
parent b88bc808ea
commit fccd2613d6

View File

@ -212,6 +212,7 @@ static void nand_reset(NANDFlashState *s)
static void nand_command(NANDFlashState *s)
{
unsigned int offset;
switch (s->cmd) {
case NAND_CMD_READ0:
s->iolen = 0;
@ -233,8 +234,12 @@ static void nand_command(NANDFlashState *s)
case NAND_CMD_NOSERIALREAD2:
if (!(nand_flash_ids[s->chip_id].options & NAND_SAMSUNG_LP))
break;
s->blk_load(s, s->addr, s->addr & ((1 << s->addr_shift) - 1));
offset = s->addr & ((1 << s->addr_shift) - 1);
s->blk_load(s, s->addr, offset);
if (s->gnd)
s->iolen = (1 << s->page_shift) - offset;
else
s->iolen = (1 << s->page_shift) + (1 << s->oob_shift) - offset;
break;
case NAND_CMD_RESET:
@ -380,12 +385,15 @@ void nand_setio(NANDFlashState *s, uint8_t value)
if (s->cmd != NAND_CMD_RANDOMREAD2) {
s->addrlen = 0;
s->addr = 0;
}
}
if (s->ale) {
s->addr |= value << (s->addrlen * 8);
unsigned int shift = s->addrlen * 8;
unsigned int mask = ~(0xff << shift);
unsigned int v = value << shift;
s->addr = (s->addr & mask) | v;
s->addrlen ++;
if (s->addrlen == 1 && s->cmd == NAND_CMD_READID)
@ -435,6 +443,7 @@ uint8_t nand_getio(NANDFlashState *s)
return 0;
s->iolen --;
s->addr++;
return *(s->ioaddr ++);
}
@ -633,9 +642,6 @@ static void glue(nand_blk_load_, PAGE_SIZE)(NANDFlashState *s,
offset, PAGE_SIZE + OOB_SIZE - offset);
s->ioaddr = s->io;
}
s->addr &= PAGE_SIZE - 1;
s->addr += PAGE_SIZE;
}
static void glue(nand_init_, PAGE_SIZE)(NANDFlashState *s)